Semiconductor strain gauge transducer

Details Semiconductor strain gauge transducer Semiconductor strain gauge transducer

1981-02-05

1983-02-15

Myracle, Jerry W.

Measuring and testing

Specimen stress or strain, or testing by stress or strain...

Specified electrical sensor or system

73727, 338 22SD, G01B 716

Patent

active

043733999

ABSTRACT:
A semiconductor strain gauge transducer comprising a sensitive element which is a monocrystal sapphire substrate carrying epitaxial silicon strain gauges of p-type conduction. The hole concentration in the silicon is 3.5.multidot.10.sup.19 to 3.multidot.10.sup.20 cm.sup.-3. The silicon strain gauges are interconnected to form a bridge or differential strain-sensitive circuit.

REFERENCES:
patent: 3916365 (1975-10-01), Giachino
patent: 4191057 (1980-03-01), Busta
Schlumberger, Fiche Technique 76008, May 1976.
Electronnaya technika/Electronic Engineering/, Series II, Issue 2, 1976, p. 43.

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