Semiconductor strain gauge

Details Semiconductor strain gauge Semiconductor strain gauge

1981-02-23

1983-09-13

Albritton, C. L.

Electrical resistors

Strain gauge type

With temperature compensation

338 4, G01L 122

Patent

active

044045395

ABSTRACT:
A semiconductor strain gauge is arranged as a bridge having four piezoresistive elements which each include a low impurity concentration diffused portion and a heavily-doped diffused portion. The resistance values of the two low impurity concentration diffused portions opposite each other in the bridge are greater than the resistance values of the other two lower impurity concentration portions. The resistances of the heavily-doped diffused portion are selected so that the resistance of the piezoresistive elements are equal. However, by virtue of the fact that the resistance temperature coefficient of the low impurity portions are greater than the resistance temperature coefficients of the high impurity portions, the overall resistance temperature coefficients of the bridge arms will be different. This permits the zero-point voltage of the bridge to always increase with an increase in temperature.

REFERENCES:
patent: 3402609 (1968-09-01), Chiku et al.
patent: 3654545 (1972-04-01), Demark

Affiliated with

Also associated with

Rating

Semiconductor strain gauge does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor strain gauge, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor strain gauge will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1732588