Semiconductor store

Details Semiconductor store Semiconductor store

1977-04-22

1978-08-22

Wojciechowicz, Edward J.

357 41, 357 45, 357 55, H01L 2978

Patent

active

041092708

ABSTRACT:
A semiconductor store is disclosed comprising a semiconductor substrate of a highly doped semiconductor material of one conductivity type, an epitaxial layer on one surface of said substrate of the same conductivity type and of low doping, a buried layer lying partly in said substrate and partly in said epitaxial layer, said buried layer being of the opposite conductivity type and of high doping, a highly doped second layer of the same conductivity type as said buried layer in the outer surface of said epitaxial layer, a V-shape groove extending through said second layer, said epitaxial layer and said buried layer and penetrating into said substrate, an insulating layer covering said epitaxial layer and the walls of said V-shape groove, and a layer of conductive material covering said insulating layer, whereby a two-cell semiconductor store is provided.

REFERENCES:
patent: 3893155 (1975-07-01), Ogiue
patent: 4003036 (1977-01-01), Jenne

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