Semiconductor storage element and a process for the production t

Details Semiconductor storage element and a process for the production t Semiconductor storage element and a process for the production t

1978-09-18

1980-06-03

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 41, 307238, 29571, H01L 2710

Patent

active

042064716

ABSTRACT:
A semiconductor storage element is disclosed having a storage capacitor whose storage electrode is arranged above a doped semiconductor layer. The storage electrode is formed of a portion of a strip-like reference potential line which is separated from the semiconductor layer by a thin insulating layer. A transfer gate is also provided adjacent to the storage electrode which is formed from a portion of a strip-like word line likewise separated from the semiconductor layer by a thinner insulating layer. An oppositely doped zone is arranged at a surface of the semiconductor layer and serves as a bit line. The word line and the reference potential line run parallel to one another and are arranged directly adjacent to one another. When a potential is connected to the transfer gate, the bit line doped zone may be selectively conductively connected to the storage zone. The reference potential line for one group of the storage elements can be also used as a word line for another group of the storage elements.

REFERENCES:
patent: 3997799 (1976-12-01), Baker
patent: 4139786 (1979-02-01), Raymond et al.
patent: 4150389 (1979-04-01), Roessler
Engeler et al, IEEE Journal of Solid State Circuits, vol. SC-7, No. 5, Oct. 1972.

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