Semiconductor storage device with first and second pads...

Static information storage and retrieval – Interconnection arrangements – Transistors or diodes

Reexamination Certificate

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Details

C365S063000, C365S051000, C365S206000

Reexamination Certificate

active

07869245

ABSTRACT:
An excess region on a chip plane is eliminated to reduce a chip size. A plurality of data pads, which input/output data, are arranged near one side of an outer periphery of a substrate in parallel with the aforementioned one side, and a plurality of data pads, which input/output data, are arranged on an inner side of the plurality of data pads in parallel with the plurality of data pads. NMOSs, which output data, are arranged between the data pads, and PMOSs, which output data, are arranged at positions where they face the NMOSs near the data pads.

REFERENCES:
patent: 7158397 (2007-01-01), Rinerson et al.
patent: 7307871 (2007-12-01), Liaw
patent: 2004/0141352 (2004-07-01), Dufourt et al.
patent: 07-202145 (1995-08-01), None
patent: 08-017965 (1996-01-01), None
patent: 08-316436 (1996-11-01), None

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