Semiconductor storage device using magnetoresistive effect...

Details Semiconductor storage device using magnetoresistive effect... Semiconductor storage device using magnetoresistive effect...

2011-07-12

2011-07-12

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

C257SE21645, C257SE21388, C365S158000

Reexamination Certificate

active

07977756

ABSTRACT:
A semiconductor storage device includes a semiconductor substrate, a source region, a source line, and a bit line. The source region is formed in an element region formed on the semiconductor substrate. The source line is formed to overlap with the source region in planar view. The bit line is formed on a layer higher than the source line.

REFERENCES:
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patent: 2008/0192531 (2008-08-01), Tamura et al.
patent: 2008/0239782 (2008-10-01), Asao
patent: 9-186255 (1997-07-01), None
patent: 9-321152 (1997-12-01), None
patent: 2006-272056 (2006-10-01), None
patent: WO2007/046145 (2007-04-01), None
M. Hosomi et al.; “A Novel Nonvolatile Memory with Spin Toque Transfer Magnetization Switching: Spin-RAM”; IEEE International Electron Devices Meeting Technical Digest, 2005, pp. 458-462.

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