Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With desiccant – getter – or gas filling
Reexamination Certificate
2007-12-14
2011-10-18
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With desiccant, getter, or gas filling
C257SE23137
Reexamination Certificate
active
08039940
ABSTRACT:
According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.
REFERENCES:
patent: 4630095 (1986-12-01), Otsuka et al.
patent: 5374842 (1994-12-01), Kusakabe
patent: 5506155 (1996-04-01), Kaigawa
patent: 5539245 (1996-07-01), Imura et al.
patent: 5648682 (1997-07-01), Nakazawa et al.
patent: 5721145 (1998-02-01), Kusakabe et al.
patent: 5894037 (1999-04-01), Kikuchi et al.
patent: 6072239 (2000-06-01), Yoneda et al.
patent: 6268642 (2001-07-01), Hsuan et al.
patent: 2002/0047213 (2002-04-01), Komiyama et al.
patent: 2003/0017682 (2003-01-01), Saino
patent: 2005/0285232 (2005-12-01), Jiang et al.
patent: 1152797 (1997-06-01), None
patent: 1-215032 (1989-08-01), None
patent: 2-005530 (1990-01-01), None
patent: 4-27126 (1992-01-01), None
patent: 7-302769 (1995-11-01), None
patent: 2003-224247 (2003-08-01), None
Computer Translation of JP 2003/224247 (Mitani), pp. 1-11, http:/www.jpdl.inpit.go.jp (Sep. 13, 2010).
Japanese Patent Office issued a Japanese Office Action dated Nov. 12, 2009, Application No. 2004070537.
Japanese Patent Office issued a Japanese Office Action dated Mar. 31, 2010, Application No. 2004-070537.
Harada Yasushi
Ishihara Kaoru
Kanamori Kohji
Katayama Isao
Kodama Noriaki
Renesas Electronics Corporation
Thomas Toniae
Wilczewski Mary
Young & Thompson
LandOfFree
Semiconductor storage device, semiconductor device, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor storage device, semiconductor device, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor storage device, semiconductor device, and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4274524