Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-09-12
2006-09-12
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185140, C365S185010, C365S149000, C257S324000
Reexamination Certificate
active
07106630
ABSTRACT:
A semiconductor storage device is provided, which comprises a memory array comprising a plurality of memory elements, a section for performing an erase or program operation with respect to the memory array, a section for receiving a suspend command, and in response to the suspend command, suspending the erase or program operation, and a section for receiving a resume command, and in response to the resume command, resuming the suspended erase or program operation. Each of the plurality of memory elements comprises a gate electrode provided via a gate insulating film on a semiconductor layer, a channel region provided under the gate electrode, diffusion regions provided on opposite sides of the channel region and having a conductivity type opposite to that of the channel region, and memory function sections provided on opposite sides of the gate electrode and having a function of retaining charges.
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Hamaguchi Koji
Iwata Hiroshi
Morikawa Yoshinao
Nawaki Masaru
Shibata Akihide
Morrison & Foerster / LLP
Phung Anh
Sharp Kabushiki Kaisha
Wendler Eric J.
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