Induced nuclear reactions: processes – systems – and elements – With control of reactor – By movement of control element or by release of neutron...
Reexamination Certificate
2008-01-01
2008-01-01
Le, Thong Q. (Department: 2827)
Induced nuclear reactions: processes, systems, and elements
With control of reactor
By movement of control element or by release of neutron...
C376S104000, C376S212000
Reexamination Certificate
active
07315603
ABSTRACT:
There is provided a semiconductor storage device and portable electronic equipment including a nonvolatile memory element that can easily be miniaturized. The semiconductor storage device includes a memory cell array21in which a plurality of memory elements1are arranged and a write state machine32. The memory element1includes a gate electrode104formed on a semiconductor layer102via a gate insulator103, a channel region arranged below the gate electrode104, diffusion regions107a, 107bthat are located on both sides of the channel region and have a conductive type opposite to that of the channel region and memory function bodies109that are located on both sides of the gate electrode104and have a function to retain electric charge. The write state machine32can selectively prevent program and erase of data in the memory elements within a predetermined range.
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Iwase Yasuaki
Iwata Hiroshi
Morikawa Yoshinao
Nawaki Masaru
Shibata Akihide
Birch & Stewart Kolasch & Birch, LLP
Le Thong Q.
Sharp Kabushiki Kaisha
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