Semiconductor storage device equipped with a sense amplifier...

Details Semiconductor storage device equipped with a sense amplifier... Semiconductor storage device equipped with a sense amplifier...

2009-09-22

2011-10-11

Tran, Andrew Q (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185170, C365S185120, C365S185030, C365S185210, C365S185190

Reexamination Certificate

active

08036034

ABSTRACT:
A semiconductor storage device comprises: a sense amplifier circuit; a first data retaining circuit and a second data retaining circuit configured to retain data and threshold voltage information, the second data retaining circuit output the data and the threshold voltage information to the outside; and a control circuit configured to control operation. The sense amplifier circuit is configured to perform a data-read operation and a threshold-voltage-information read operation at the same time. The control circuit is configured to control read operations so that either one of the data or the threshold voltage information for which a read operation is finished earlier is output from the second data retaining circuit, and the other one of the data or the threshold voltage information for which a read operation is not finished yet is read from a memory cell array and retained in the first data retaining circuit.

REFERENCES:
patent: 7031210 (2006-04-01), Park et al.
patent: 2008/0055990 (2008-03-01), Ishikawa et al.
patent: 2010/0208519 (2010-08-01), Shiga et al.
patent: 2011/0044103 (2011-02-01), Shiga
U.S. Appl. No. 12/706,306, filed Feb. 16, 2010, Shiga, et al.
U.S. Appl. No. 12/838,811, filed Jul. 19, 2010, Shiga.

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