Static information storage and retrieval – Powering
Reexamination Certificate
2006-01-10
2006-01-10
Phung, Anh (Department: 2824)
Static information storage and retrieval
Powering
C365S185190, C365S185180
Reexamination Certificate
active
06985397
ABSTRACT:
A semiconductor storage device has a variable-stage charge pump, and a memory cell array to which an output from an output line of the variable-stage charge pump is fed. In the variable-stage charge pump, first and second charge pumps are connected in parallel between a common input bus and a common output bus. A first n-channel MOSFET is provided on a line connecting an output terminal of the first charge pump and the common output bus, and another n-channel MOSFET is provided on a line connecting the second charge pump and the common output bus. First switches are provided between the output terminal of the first charge pump and the first n-channel MOSFET, and between the input terminal of the second charge pump and the second switch. A second switch is provided on a line connecting an input terminal of the second charge pump and the common input bus.
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Iwata Hiroshi
Nawaki Masaru
Shibata Akihide
Tokui Kei
Yaoi Yoshifumi
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