Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2006-09-19
2006-09-19
Elms, Richard (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185180, C365S189011, C365S185030, C257S314000
Reexamination Certificate
active
07110297
ABSTRACT:
A semiconductor storage device is provided, which comprises a memory array comprising memory elements. Each memory element comprises a gate electrode, a channel region, first and second diffusion regions, and first and second memory function sections provided an opposite aides of the gate electrode and having a function of retaining charges. The device further comprises a row decoder for selecting a word line in accordance with a row address, and a write control circuit for applying a write pulse to a bit line, which is connected to one of the first and second diffusion regions of the memory element connected to the selected word line, in accordance with a column address. The write control circuit controls the application of the write pulse so that a quantity of charges retained in one of the first and second memory function sections corresponds to a value of multibit data.
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Iwata Hiroshi
Morikawa Yoshinao
Nawaki Masaru
Shibata Akihide
Elms Richard
Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
Wendler Eric J.
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