Semiconductor storage device and manufacturing method thereof

Details Semiconductor storage device and manufacturing method thereof Semiconductor storage device and manufacturing method thereof

2008-08-18

2009-12-08

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Gettering of substrate

By layers which are coated, contacted, or diffused

C438S287000, C438S591000, C438S593000, C257SE21422, C257SE21497, C257SE21639

Reexamination Certificate

active

07629232

ABSTRACT:
A non-volatile semiconductor storage device having a high-dielectric-constant insulator and a manufacturing method thereof suitable for miniaturization are disclosed. According to one aspect of the present invention, it is provided a semiconductor storage device comprising a semiconductor substrate, a plurality of first conductor layers formed on the semiconductor substrate through a first insulator, an isolation formed between the plurality of first conductor layers, a silicon oxide film formed on the first conductor layer, a high-dielectric-constant insulator formed on the silicon oxide film and the isolation and being diffused silicon and oxygen at least in a surface thereof contacting with the silicon oxide film, and a second conductor film formed above the high-dielectric-constant insulator.

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