Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2011-07-12
2011-07-12
Dinh, Son T (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185060, C365S185070
Reexamination Certificate
active
07978515
ABSTRACT:
A semiconductor storage device includes a first memory cell for storing two kinds of states, a second memory cell for storing two kinds of states, and a sense amplifier for detecting a potential difference between voltages equivalent to readout currents of the first and second memory cells, respectively. Either one of information data “0” or data “1”, which is stored in combination of the first and second memory cells, is read out by detecting the potential difference equivalent to the readout current difference between the first and second memory cells.
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Iwata Hiroshi
Ohta Yoshiji
Birch & Stewart Kolasch & Birch, LLP
Dinh Son T
Nguyen Nam T
Sharp Kabushiki Kaisha
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