Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-06-10
2008-06-10
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S185250
Reexamination Certificate
active
07385848
ABSTRACT:
A semiconductor storage device has a memory cell array composed of a plurality of arrayed memory cells, word lines, bit lines, a bit line charging and discharging circuit, and a readout section. Each memory cell has two storage regions in vicinity of opposite ends of a channel region, first and second input/output terminals, and a control terminal. The readout section reads information stored in one of the first and second storage regions of a memory cell based on a first output equivalent to an output current from the memory cell when a current is passed from the first input/output terminal to the second input/output terminal of the memory cell and a second output equivalent to an output current from the memory cell when a current is passed from the second input/output terminal to the first input/output terminal.
REFERENCES:
patent: 6747892 (2004-06-01), Khalid
patent: 6912160 (2005-06-01), Yamada
patent: 2004-273093 (2004-09-01), None
Iwata Hiroshi
Ohta Yoshiji
Birch & Stewart Kolasch & Birch, LLP
Hoang Huan
Sharp Kabushiki Kaisha
LandOfFree
Semiconductor storage device and electronic equipment does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor storage device and electronic equipment, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor storage device and electronic equipment will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2803377