Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2006-08-22
2006-08-22
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185210, C365S185230, C365S201000
Reexamination Certificate
active
07095652
ABSTRACT:
A semiconductor storage device comprises memory cells that store data by accumulating or releasing an electric charge; a memory cell array having a matrix arrangement of the memory cells; a plurality of word lines connected to memory cells aligned on rows of the memory cell array; a plurality of sub-bit lines connected to memory cells aligned on columns of the memory cell array; a bit line select circuit selecting the sub-bit line of a column; a main bit line connected to the sub-bit line selected by the bit line select circuit; a sense line detecting the potential of the sub-bit line selected by the bit line select circuit via the main bit line and reading data out of the memory cell; a write driver applying a voltage to the sub-bit line selected by the bit line select circuit via the main bit line and writing data into the memory cell; and a first switching element connected to the main bit line and turning on when the current flowing in the memory cell is detected externally via the sub-bit line without the use of the sense line or when a voltage is applied to the memory cell externally via the sub-bit line without the use of the write driver.
REFERENCES:
patent: 5157627 (1992-10-01), Gheewala
patent: 5592425 (1997-01-01), Neduva
patent: 5612916 (1997-03-01), Neduva
patent: 6067253 (2000-05-01), Gotou
patent: 6621725 (2003-09-01), Ohsawa
patent: 2005/0265085 (2005-12-01), Kuo
patent: 2006/0062061 (2006-03-01), Suh et al.
patent: 10-241400 (1998-09-01), None
Takashi Ohsawa, et al., “Memory Design Using One-Transistor Gain Cell on SOI”, 2002 IEEE ISSCC, Digest of Technical Papers, Feb. 5, 2002, pp. 152-153.
Higashi Tomoki
Ohsawa Takashi
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Phung Anh
Sofocleous Alexander
LandOfFree
Semiconductor storage device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor storage device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor storage device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3662292