Static information storage and retrieval – Powering – Data preservation
Reexamination Certificate
2006-08-01
2006-08-01
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Powering
Data preservation
C365S228000, C365S185250
Reexamination Certificate
active
07085187
ABSTRACT:
A semiconductor storage device in which the chip area is prevented from increasing to reduce the leakage current during low power (power down) time caused by shorting across bit and word lines due to crossing failure. There are provided precharge equalizing NMOS transistors the gates of which are supplied with a control signal (BLEQT). These precharge equalizing NMOS transistors are connected across a power supply line (VNLR), supplying a precharge potential to the bit line, and the bit line. At the time of low power operation, a potential (0.7 to 1.4V) lower than the potential VPP (e.g. 3.2V) applied during the precharge operation of the normal operation is supplied to the gate terminals of the transistors to reduce the leakage current caused by shorting across the bit and word lines caused in turn by crossing failure.
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Dono Chiaki
Koshikawa Yasuji
Elpida Memory Inc.
Nguyen Tuan T.
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