Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2005-10-25
2005-10-25
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S777000, C257S778000, C257S692000, C257S780000, C257S723000, C438S108000, C438S109000, C361S760000
Reexamination Certificate
active
06958532
ABSTRACT:
A semiconductor storage device enables various plural memories to be mounted on the same package, and even though size of respective chips and/or position of bonding pad are different, it is capable of providing a stack MCP in which the chips are superimposed. It causes wiring sheet to intervene between an upper chip and a lower chip. There are provided bonding pads and a wiring pattern for connecting these bonding pads in the wiring sheet. A bonding pad of the upper chip is connected to the bonding pad by a first bonding wire, while the bonding pad is connected to a bonding pad of the package substrate by a second bonding wire. According to this construction, the signal from the upper chip is transmitted to the package substrate via the wiring sheet.
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Chu Chris C.
Eckert George
Hayes & Soloway P.C.
NEC Electronics Corporation
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