Semiconductor storage device

Data processing: artificial intelligence – Neural network

Reexamination Certificate

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C706S045000

Reexamination Certificate

active

08001065

ABSTRACT:
A semiconductor storage device includes a storage part including a plurality of nonvolatile semiconductor memory cells each having a conductive path, a charge storage layer and a control gate electrode. The device further includes a plurality of first input terminals each connected to one end of the conductive path of each nonvolatile semiconductor memory cell, a plurality of second input terminals each connected to the control gate of each nonvolatile semiconductor memory cell, and an output end connected to the other ends of the conductive paths of the plurality of nonvolatile semiconductor memory cells, respectively.

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Ouyo Butsuri, Tadashi Shibata, “Psychologically-inspired VLSI Brain Model—New Processor Architecture Inspired by Biological Principal”, Jpn. J. Appl. Phys., vol. 72, No. 10, 2003, pp. 1268-1275.
R.E. Howard, et al., “An Associative Memory Based on an Electronic Neural Network Architecture”, IEEE Transactions on Electron Devices, vol. ED-34, No. 7, Jul. 1987, pp. 1553-1556.

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