Semiconductor storage device

Static information storage and retrieval – Addressing – Particular decoder or driver circuit

Reexamination Certificate

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Details

C365S226000

Reexamination Certificate

active

07852704

ABSTRACT:
A semiconductor storage device according to one aspect of the present invention includes a DRAM cell including one transistor and one capacitor, in which one of a first voltage and a second voltage is applied to a gate of the transistor, the first voltage being a selected voltage, and the second voltage being a non-selected voltage, a voltage difference between the first voltage and the second voltage is larger than a voltage difference between a power supply voltage and a ground voltage, and one of the ground voltage and the power supply voltage which is closer to the non-selected voltage is applied to a back gate of the transistor irrespective of selection or non-selection.

REFERENCES:
patent: 6198685 (2001-03-01), Sudo et al.
patent: 6335893 (2002-01-01), Tanaka et al.
patent: 6781915 (2004-08-01), Arimoto et al.
patent: 2002/0024873 (2002-02-01), Tomishima et al.
patent: 11-31384 (1999-02-01), None
patent: 2005-135461 (2005-05-01), None

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