Semiconductor storage apparatus having an activation signal gene

Static information storage and retrieval – Format or disposition of elements

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365 63, 365205, G11C 502

Patent

active

059994363

ABSTRACT:
A semiconductor storage apparatus is disclosed, which comprises a sense amplifier area having many sense amplifiers for amplifying information which is read from a memory cell to a digit line, each of the sense amplifiers being composed of an N-MOS transistor and a P-MOS transistor, the sense amplifier area being divided into a plurality of portions, an N-MOS transistor activation signal generating circuit for generating a signal for activating the N-MOS transistor, and a P-MOS transistor activation signal generating circuit for generating a signal for activating the P-MOS transistor, wherein one of the N-MOS transistor activation signal generating circuit and the P-MOS transistor activation signal generating circuit is disposed in a opening between the divided portions of the sense amplifier area, and wherein the other of the N-MOS transistor activation signal generating circuit and the P-MOS transistor activation signal generating circuit is disposed in the sense amplifier area adjacent to a MOS transistor which constitutes a sense amplifier.

REFERENCES:
patent: 5657265 (1997-08-01), Yoo et al.

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