Semiconductor static read/write memory having an additional read

Details Semiconductor static read/write memory having an additional read Semiconductor static read/write memory having an additional read

1984-01-09

1986-10-21

Moffitt, James W.

Static information storage and retrieval

Read only systems

Semiconductive

365178, 365184, G11C 1140, G11C 1700

Patent

active

046189432

ABSTRACT:
A combined read-only and static read/write semiconductor memory is achieved by modifying the normal threshold voltage of some of the transfer FETs in an otherwise conventional static-memory cell. A read/write data bit is recovered from an addressed cell by applying a word-line voltage higher than both the threshold voltages. Read-only data is read from the same addressed cell by using a word-line voltage higher than one of the thresholds but lower than the other, then decoding the resulting bit-line voltages. An extension allows multiple read-only bits in a single cell by lowering the cell supply voltage when read-only data are addressed.

REFERENCES:
patent: 4006469 (1977-01-01), Leehan et al.
patent: 4434479 (1984-02-01), Chen et al.
patent: 4439842 (1984-03-01), Malaviya

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