Semiconductor static random access memory structure

Details Semiconductor static random access memory structure Semiconductor static random access memory structure

1994-09-22

1995-11-28

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257351, 257390, 257903, H01L 2910

Patent

active

054710715

ABSTRACT:
A pair of load transistors of a flip-flop circuit constituting a memory cell consist of thin film transistors, and channel regions of the pair of load transistors overlap drain regions of the transistors through a gate insulating film. For this reason, a channel length of the load transistor can be sufficiently increased, and a leakage current of the load transistor can be reduced.

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patent: 5132771 (1992-07-01), Yamanaka et al.
patent: 5134581 (1992-07-01), Ishibashi et al.
patent: 5281828 (1994-01-01), Muragishi

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