Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1996-11-22
1998-05-26
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257903, 257393, H01L 2711
Patent
active
057570310
ABSTRACT:
Each memory cell of an SRAM has a structure in which a gate electrode of a drive MOSFET is formed by a first conductive film, a gate electrode of a load TFT is formed by a third conducive layer and a second conductive film does not exist in an area where two gate electrodes overlap with each other. After the second conductive film is subjected to patterning, a first interlayer insulating film is successively removed with the same photolithographic mask. Since the parasitic capacitance at a memory node of the memory cell is increased by thinning the insulating film between the two gate electrodes, the SRAM has an excellent resistance to soft errors.
REFERENCES:
patent: 5239196 (1993-08-01), Ikeda et al.
Hardy David B.
NEC Corporation
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