Semiconductor solar energy device

Batteries: thermoelectric and photoelectric – Thermoelectric – Radiation pyrometer

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136 89CC, H01L 2714

Patent

active

040706893

ABSTRACT:
This disclosure relates to a semiconductor solar energy device which is of the PN-type and utilizes a dielectric anti-reflective coating on the side of the device that faces the sunlight. The fabrication techniques used in making this semiconductor device include the use of ion implantation to form doped or diffused regions in the device. One of the ion implanted regions located on the side of the device that is subjected to the sunlight is configured in order to permit metal ohmic contact to be made thereto without shorting through the doped region during sintering of the metal contacts to the semiconductor substrate. The dielectric anti-reflective coating, in one embodiment, is a composite of silicon dioxide and silicon nitride layers. The device is designed to permit solder contacts to be made to the P and N regions thereof without possibility of shorting to semiconductor regions of opposite type conductivity.

REFERENCES:
patent: 3437527 (1969-04-01), Webb
patent: 3457467 (1969-07-01), Amsterdam et al.
patent: 3460240 (1969-08-01), Tarneja et al.
patent: 3512051 (1970-05-01), Noll
patent: 3523038 (1970-08-01), Sanders
patent: 3877058 (1975-04-01), Cricchi
Kaplan, "Electrically Controllable Read-Only Storage Device," IBM Technical Disclosure Bulletin, vol. 13, No. 5, Oct. 1970, p. 1268.
Forbes, "Photodiode Having Ion Implant for Improved Light Sensitivity," IBM Technical Disclosure Bulletin, vol. 15, No. 4, Sept. 1972, p. 1348.
Hovel et al., "Method for Si and GaAs Solar Cell Diffusion," IBM Technical Disclosure Bulletin, vol. 16, No. 7, Dec. 1973, pp. 2083-2084.

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