Semiconductor slapper

Ammunition and explosives – Igniting devices and systems – Electrical primer or ignitor

Patent

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Details

1022022, 1022027, F42C 1912

Patent

active

053700546

ABSTRACT:
An RF-insensitive semiconductor slapper ignitor is created using a silicon ubstrate having a first metallized portion centrally located on its bottom face to form a Schottky barrier diode thereon, and a second substantially smaller metallized portion centrally located on its top face to form a consumable plug. A flyer disc is disposed atop the second metallized portion and is propelled when the consumable plug vaporizes in response to the high current density associated with ignition. In various embodiments the flyer disc is either an insulating material such as plastic, or polyimide, or formed integral to a top contact metal layer.

REFERENCES:
patent: 4471697 (1984-09-01), McCormick et al.
patent: 4840122 (1989-06-01), Nerheim
patent: 4924774 (1990-05-01), Lenzen
patent: 4944225 (1990-07-01), Barker
patent: 5085146 (1992-02-01), Baginski
patent: 5285727 (1994-02-01), Reams, Jr. et al.

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