Semiconductor single crystalline substrate and method for produc

Details Semiconductor single crystalline substrate and method for produc Semiconductor single crystalline substrate and method for produc

1995-02-08

1998-05-12

Levy, Stuart S.

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

437 95, 437946, 257623, 257798, H01L 21304, H01L 2120, H01L 2906

Patent

active

057510555

ABSTRACT:
In a semiconductor single crystalline substrate provided with a protecting film to prevent autodoping on the reverse surface thereof, for growing a vapor-phase epitaxial layer on the main obverse surface thereof, a width of a chamfer is set for locating an edge-crown occurred in consequence of a vapor-phase epitaxial growth on the chamfer, and a gap of a distance is formed between a periphery of the protecting film and an innermost part of the chamfer on the reverse surface.

REFERENCES:
patent: 3834083 (1974-09-01), Hoshi et al.
patent: 4783225 (1988-11-01), Maejima et al.
patent: 4925809 (1990-05-01), Yoshiharu et al.
patent: 5021862 (1991-06-01), Ogino
patent: 5110764 (1992-05-01), Ogino

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