Semiconductor single-crystal lift device

Details Semiconductor single-crystal lift device Semiconductor single-crystal lift device

1997-01-21

1999-02-09

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117200, 117217, 117222, 117900, C30B 3500

Patent

active

058688366

ABSTRACT:
A semiconductor single crystal lift device which comprises a crucible for melting materials for forming semiconductor single crystals and a radiation screen disposed at an upper portion of the crucible and formed of a reversed-cone-shaped adiabatic tube surrounding a lift zone, the apparatus being adopted for lifting up the semiconductor single crystal from a melt in the crucible, in which the radiation screen is divided into more than three adiabatic members, at least part of the adiabatic members being configured in a detachable fashion so that an adiabatic nature of the radiation screen can be partly altered.

REFERENCES:
patent: 5363796 (1994-11-01), Kobayashi et al.
patent: 5441014 (1995-08-01), Tomioka et al.

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