Semiconductor single-crystal growth system

Details Semiconductor single-crystal growth system Semiconductor single-crystal growth system

1995-08-22

1998-02-24

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117208, 117213, 117217, 117218, C30B 3500

Patent

active

057208107

ABSTRACT:
A system for growing high-quality, low-carbon-concentration single crystals which have an excellent gas-flow guiding function near the melt, containing 1) an inverted conical, flow-guide cover placed above and coaxially with a double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the single crystal to be grown and the inner surface of the sidewall of the inner crucible; 2) a short passage comprising a hole passing through the sidewall of the inner crucible at a position higher than the level of the melt; and 3) a flow guide cylinder placed above and coaxially with the double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the sidewall of the inner crucible and the inner surface of the sidewall of the outer crucible, all arranged in a furnace.

REFERENCES:
patent: 4352784 (1982-10-01), Lin
patent: 5009863 (1991-04-01), Shiua et al.
patent: 5196173 (1993-03-01), Arai et al.
patent: 5361721 (1994-11-01), Takano et al.

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