Semiconductor single crystal growing apparatus and crystal growi

Details Semiconductor single crystal growing apparatus and crystal growi Semiconductor single crystal growing apparatus and crystal growi

1998-12-11

2000-06-20

Powell, William

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 30, 117208, 117917, C30B 1500

Patent

active

060773464

ABSTRACT:
In the growth of a semiconductor single crystal according to the Czochralski method, a magnetic field is generated in a semiconductor melt and a current is supplied in the semiconductor melt in a direction perpendicular to the magnetic field. This makes it possible to cause the semiconductor melt to rotate spontaneously without rotating the crucible, thereby to grow a single crystal of semiconductor without striation even when growing a single crystal of semiconductor having a large diameter. Also it is made possible to exactly control the rotation rate of the semiconductor melt by changing the intensity of the magnetic field and the magnitude of the current independently. Further, the distribution of the rotation rates in the semiconductor melt can also be varied by changing the position of electrodes or electrode protecting tubes for immersing in the semiconductor melt.

REFERENCES:
patent: 5797990 (1998-08-01), Li
Keigo Hoshikawa et al., "Low Oxygen Content Czochralski Silicon Crystal Growth", Japanese Journal of Applied Physics, vol. 19, No. 1, Jan., 1980, pp. L33-36.

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