Semiconductor SiCl light source and a method of manufacturing sa

Details Semiconductor SiCl light source and a method of manufacturing sa Semiconductor SiCl light source and a method of manufacturing sa

1975-06-13

1976-10-12

Edlow, Martin H.

Metal treatment

Stock

Ferrous

357 61, 357 63, 148190, H01L 3300

Patent

active

039861937

ABSTRACT:
A semiconductor light source using nitrogen-doped n-type silicon carbide with a p-n junction electroluminescent within the visible region of the spectrum, and with a p-layer doped with an acceptor impurity, wherein the uncompensated majority donor concentration in said silicon carbide is 0.8 .times. 10.sup.18 to 5 .times. 10.sup.18 cm.sup..sup.-3, the p-layer is doped with an acceptor impurity with a minimum activation energy and with a solubility in silicon carbide of about 10.sup.19 to 10.sup.20 cm.sup..sup.-3, the uncompensated donor concentration in the base layer is 0.8 .times. 10.sup.18 to 5 .times. 10.sup.18 cm.sup..sup.-3 and a central layer, 0.05 to 1 micron thick, located between the p-layer and the base layer is doped with luminescence activators of donor and acceptor types to a concentration of 0.1 .times. 10.sup.18 to 2 .times. 10.sup.18 cm.sup..sup.-3 and has a resistivity greater than the resistivity of the base layer by at least three orders of magnitude.

REFERENCES:
patent: 3458779 (1969-07-01), Blank
patent: 3829333 (1974-08-01), Tohi et al.

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