Semiconductor sensor with pressure difference adjusting means

Details Semiconductor sensor with pressure difference adjusting means Semiconductor sensor with pressure difference adjusting means

2006-08-22

2006-08-22

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

C257S415000, C073S204260

Reexamination Certificate

active

07095064

ABSTRACT:
In a semiconductor sensor having a membrane structure, the destruction of the membrane caused by the expansion or contraction of a fluid within a hollow part formed under the membrane while the sensor is in use is prevented. A semiconductor sensor10comprising a substrate30and a membrane20formed on the top surface thereof, in which the bottom of the substrate30and a mounting surface50on which the sensor10is mounted are bonded, has pressure difference adjusting means22ato22cfor eliminating the difference in pressure of a fluid between an inside and an outside of a hollow part34while the sensor is in use.

REFERENCES:
patent: 5581028 (1996-12-01), Barth et al.
patent: 6150681 (2000-11-01), Allen
patent: A S59-137835 (1984-08-01), None
patent: A-H06-129898 (1994-05-01), None
patent: A-H07-58134 (1995-03-01), None
patent: A-H07-120306 (1995-05-01), None

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