Measuring and testing – Volume or rate of flow – Thermal type
Reexamination Certificate
2011-08-30
2011-08-30
Thompson, Jewel (Department: 2855)
Measuring and testing
Volume or rate of flow
Thermal type
Reexamination Certificate
active
08006553
ABSTRACT:
A sensor includes: a silicon substrate having a hollow portion, which is arranged on a backside of the substrate; an insulation film disposed on a front side of the substrate and covering the hollow portion; a heater disposed on the insulation film, made of a semiconductor layer, and configured to generate heat; and an anti-stripping film for protecting the insulation film from being removed from the silicon substrate. The silicon substrate, the insulation film and the semiconductor layer provide a SOI substrate. The hollow portion has a sidewall and a bottom. The anti-stripping film covers at least a boundary between the sidewall and the bottom of the hollow portion.
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Notice of Reasons for Refusal mailed on Feb. 1, 2011 issued from the Japanese Patent Office in the corresponding Japanese patent application No. 2009-135263 (and English translation).
Office Action mailed on May 17, 2011 issued in the corresponding Japanese Patent Application No. 2009-135263 (English translation enclosed).
Abe Ryuichirou
Fukada Tsuyoshi
Suzui Keisuke
Denso Corporation
Posz Law Group , PLC
Thompson Jewel
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