Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-06-02
2009-12-08
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S432000, C257S687000, C257S678000, C250S239000, C250S216000
Reexamination Certificate
active
07629660
ABSTRACT:
A semiconductor sensor component including a sensor chip and methods for the manufacturing thereof is disclosed. In one embodiment, the semiconductor sensor component includes a package which itself includes a transparent plastic material. The sensor chip has an active top side and a back side, wherein a sensor area is arranged on the active top side and flipchip contacts are provided outside of the sensor area on the active top side. These flipchip contacts are electrically connected to a circuit structure, wherein the circuit structure allows free access to the sensor area. The sensor chip including the sensor area and the flipchip contacts and a part of the circuit structure which is electrically connected to the flipchip contacts are embedded in the transparent plastic material, wherein the transparent plastic material includes a rubber-elastic substance.
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Bauer Michael
Haimerl Alfred
Kessler Angela
Mahler Joachim
Schober Wolfgang
Dicke Billig & Czaja, PLLC
Infineon - Technologies AG
Lopez Fei Fei Yeung
Tran Minh-Loan T
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