Semiconductor sensor and method for manufacturing the same

Details Semiconductor sensor and method for manufacturing the same Semiconductor sensor and method for manufacturing the same

2011-07-26

2011-07-26

Malsawma, Lex (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

C310S31300R

Reexamination Certificate

active

07986017

ABSTRACT:
A semiconductor sensor includes: a semiconductor substrate; a plurality of piezoelectric thin films layered on the semiconductor substrate, the plurality of piezoelectric thin films including at least a pair of the piezoelectric thin films layered above and below; a pair of electrodes that are formed at an interface of at least the pair of the piezoelectric thin films layered above and below and excite surface acoustic waves; a thin film directly under a lowest-layer piezoelectric film of the piezoelectric thin films; a metal thin film that is formed at an interface of the lowest-layer piezoelectric thin film and the thin film, and facilitate a growth of a ridge-and-valley portion on a surface of an uppermost-layer piezoelectric thin film of the piezoelectric thin films; and a sensitive film for molecular adsorption formed on at least the ridge-and-valley portion on the uppermost-layer piezoelectric thin film.

REFERENCES:
patent: 5296125 (1994-03-01), Glass et al.
patent: 2009/0184381 (2009-07-01), Takizawa et al.
patent: 2009/0267164 (2009-10-01), Wunnicke et al.
patent: 2006-220546 (2006-08-01), None
patent: 2007-093573 (2007-04-01), None
patent: 2007-147556 (2007-06-01), None
U.S. Appl. No. 12/336,846, filed Dec. 17, 2008.
“CMOS Integrated Gas Sensor Chip Using SAW Technology”; Sharokh Ahmadi, Can Korman, Mona Zaghloul, and Kuan-Hsun Huang; Department of Electrical and Computer Engineering, The George Washington University, Washington DC 20052; Circuits and Systems, 2003, ISCAS '03, Proceedings of the 2003 International Symposium on Circuits and Systems, Published May 25-28, 2003.
“CMOS-based chemical microsensors”; Andreas Hierlemann and Henry Baltes; Physical Electronics Laboratory, ETH Zurich, Honggerberg, HPT H 4.2, CH-8093 Zurich, Switzerland; Analyst, 2003, 128, 15-28.
“Synthesis of C-Axis-Oriented AIN Thin Films on High-Conducting Layers: Al, Mo, Ti, TiN, and Ni”; Gonzalo F. Iriarte, Johan Bjurstrom, Jorgen Westlinder, Fredrik Engelmark, and Ilia V. Katardjiev, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 52, No. 7, Jul. 2005.

Affiliated with

Also associated with

Rating

Semiconductor sensor and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor sensor and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor sensor and method for manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2673476