Semiconductor sensor and manufacturing method thereof

Semiconductor device manufacturing: process – Including control responsive to sensed condition

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Details

438118, 438127, H01L 2144, H01L 2148, H01L 2150, H01L 2100

Patent

active

060935766

ABSTRACT:
A manufacturing method produces a semiconductor pressure sensor having a silicon sensor element by electrically connecting a leading frame to the sensor element, and adhering a resin package, e.g., made of PPS resin or PBT resin, for covering the sensor element to the leading frame. Before adhering the package and the leading frame, the manufacturing method applies ultraviolet rays with short wave length to each contact portion of the package and lead frame to improve the adhesive characteristics thereof.

REFERENCES:
patent: 4523371 (1985-06-01), Wakashima
patent: 5436492 (1995-07-01), Yamanaka
patent: 5893723 (1999-04-01), Yamanaka

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