Semiconductor sensor and manufacturing method of the same

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal

Reexamination Certificate

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C438S050000, C338S277000

Reexamination Certificate

active

07838951

ABSTRACT:
A semiconductor sensor and a manufacturing method of the same capable of making the specific gravity of a weight part to be greater than that of a weight part made of semiconductor material only is disclosed. The semiconductor sensor includes the weight part, a supporting part, a flexible part, and plural piezoresistive elements. The weight part includes a weight part photosensitive resin layer made of photosensitive resin in which metal particles are included. The supporting part surrounds and is separated from the weight part. The flexible part is provided between the weight part and the supporting part to support the weight part. The flexible part includes a flexible part semiconductor layer where the plural piezoresistive elements are formed. This configuration allows the specific gravity of the weight part photosensitive resin layer greater than that of the weight part semiconductor layer due to the metal particles.

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patent: 6560002 (2003-05-01), Mori
patent: 7540191 (2009-06-01), Hashimoto et al.
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patent: 2003-202778 (1991-09-01), None
patent: H03-202778 (1991-09-01), None
patent: 2003-270262 (2003-09-01), None
patent: 2006-250653 (2006-09-01), None
patent: 2007-033355 (2007-02-01), None

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