Measuring and testing – Specimen stress or strain – or testing by stress or strain... – Specified electrical sensor or system
Patent
1991-02-06
1993-02-23
Myracle, Jerry W.
Measuring and testing
Specimen stress or strain, or testing by stress or strain...
Specified electrical sensor or system
257254, G01B 716
Patent
active
051879867
ABSTRACT:
A semiconductor sensor includes a field-effect transistor for detecting a physical quantity such as pressure, strain, acceleration or the like. The field-effect transistor is disposed on an elastically deformable portion of a cantilevered semiconductor substrate. A detected signal generator generates a signal representing a change in a drain current of the field-effect transistor in response to a stress which is applied to the field-effect transistor due to elastic deformation of the semiconductor substrate. The field-effect transistor may be supplied with a fixed gate bias voltage and an integrator may generate a signal representing an integral of the drain current for temperature compensation. Alternatively, an integrator may generate a signal representing an integral of the drain current, and a gate bias voltage may be applied to the field-effect transistor so that the signal generated by the integrator will be of a predetermined value for automatic temperature compensation. As a further alternative, a self-bias circuit may be connected between the field-effect transistor and the detected signal generator for applying a gate self-bias voltage to the field-effect transistor for automatic temperature compensation.
REFERENCES:
patent: 3245252 (1966-04-01), First et al.
patent: 3582690 (1971-06-01), Yerman
patent: 3714806 (1973-02-01), Berkey et al.
patent: 3737684 (1973-06-01), Kuno et al.
patent: 4633099 (1986-12-01), Tanabe et al.
Hiyama Satoshi
Takebe Katsuhiko
Burt Pamela S.
Carrier Joseph P.
Honda Giken Kogyo Kabushiki Kaisha
Myracle Jerry W.
Weiner Irving M.
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