Semiconductor semicustom-made integrated circuit device having c

Details Semiconductor semicustom-made integrated circuit device having c Semiconductor semicustom-made integrated circuit device having c

1995-06-27

1997-04-01

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

257202, 257401, H01L 2702, H01L 2710

Patent

active

056169400

ABSTRACT:
A basic cell of gate array has a plurality of p-channel type field effect transistors and a plurality of n-channel type field effect transistors available for electric circuits different in configuration; although gate electrodes are physically separated, a p-channel type field effect transistor and an n-channel type field effect transistor share a p-type source/drain area and an n-type source/drain area with another p-channel type field effect transistor different in channel width from the p-channel type field effect transistor and another n-channel type field effect transistor also different in channel width from the n-channel type field effect transistor so as to selectively use the p-channel type field effect transistors and the n-channel type field effect transistors, and the shared source/drain regions effectively decrease the occupation areas of the field effect transistors.

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patent: 5444275 (1995-08-01), Kugishima et al.
patent: 5479034 (1995-12-01), Hashimoto et al.
patent: 5510636 (1996-04-01), Murata
patent: 5539246 (1996-07-01), Kapoor

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