Electric lamp and discharge devices: systems – Combined load device or load device temperature modifying... – Discharge device load with distributed parameter-type...
Patent
1985-02-01
1987-06-30
Chatmon, Saxfield
Electric lamp and discharge devices: systems
Combined load device or load device temperature modifying...
Discharge device load with distributed parameter-type...
313103R, 313346R, 315 3951, H01J 2534
Patent
active
046773428
ABSTRACT:
The cathode and tube of this invention comprise a secondary emission semiconductor cathode in a crossed-field high power amplifier. A gallium arsenide semiconductor doped with an impurity to make it more conductive than intrinsic gallium arsenide has been found to perform better than prior art secondary emission cathodes when it is incorporated as a cathode in a high-power crossed-field amplifier tube operating at high average and peak current. With a gallium arsenide cathode, the crossed-field amplifier tube exhibits a radio frequency output pulse which has fast rise time and much reduced leading-edge jitter relative to performance of the same cross-field amplifier tube having a conventional secondary emission cathode.
REFERENCES:
patent: 3096457 (1963-07-01), Smith, Jr. et al.
patent: 3223882 (1965-12-01), Thal, Jr.
patent: 3255422 (1966-06-01), Feinstein et al.
patent: 3364367 (1968-01-01), Brody
patent: 3478213 (1969-11-01), Simon et al.
patent: 3596131 (1971-07-01), Wilczek
patent: 3611077 (1971-10-01), Smith
patent: 4019082 (1977-04-01), Olsen et al.
patent: 4028583 (1977-06-01), Bigham
patent: 4200821 (1980-04-01), Bekefi et al.
patent: 4410833 (1983-10-01), Ganguly et al.
U.S. patent application Ser. No. 812,155, filed 12-23-85, by George H. MacMaster et al, entitled, "A P-N Junction Semiconductor Secondary Emission Cathode and Tube".
MacMaster George H.
Nichols Lawrence J.
Chatmon Saxfield
Raytheon Company
Santa Martin M.
Sharkansky Richard M.
LandOfFree
Semiconductor secondary emission cathode and tube does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor secondary emission cathode and tube, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor secondary emission cathode and tube will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-449629