Semiconductor scribing method

Details Semiconductor scribing method Semiconductor scribing method

1977-01-31

1978-06-27

DiPalma, Victor A.

Metal working

Method of mechanical manufacture

Obtaining plural product pieces from unitary workpiece

29580, 204 15, 20412965, B23P 1700

Patent

active

040966194

ABSTRACT:
This relates to the scribing and breaking of a semiconductor wafer into individual dies by anodizing the silicon in regions corresponding to the die boundaries. The regions are selectively anodized, and the anodization is continued until the anodized silicon extends into the semiconductor wafer to a depth that allows easy breakage when the wafer is stressed. To facilitate breakage, the anodized silicon may be removed with hydrofluoric acid.

REFERENCES:
patent: 3054709 (1962-09-01), Freestone et al.
patent: 3392440 (1968-07-01), Yanagawa
patent: 3954523 (1976-05-01), Magdo et al.
patent: 3962052 (1976-06-01), Abbas et al.
patent: 3997964 (1976-12-01), Holbrook
patent: 3998674 (1976-12-01), Cameron et al.

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