Semiconductor ROM with reduced supply voltage requirement

Static information storage and retrieval – Read only systems – Semiconductive

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365226, 36518909, G11C 1700

Patent

active

048624136

ABSTRACT:
A memory device including a voltage stepdown circuit is proposed in which a reduced reference voltage is produced from a supplied reference voltage and is passed to the selected one of the row lines of the memory array after all the row lines are discharged to ground potential, while the supplied reference voltage is fed directly, viz., without reduction, to all the control circuits of the device. The voltage stepdown circuit provided in the memory device is thus relieved from the burden to supply current to the control circuits and has only to feed the selected one of the row lines so that the field-effect transistors forming the voltage stepdown circuit can be fabricated to have channel regions with significantly reduced widths.

REFERENCES:
patent: 4021781 (1977-05-01), Caudel
patent: 4318014 (1982-03-01), McAlister et al.
patent: 4592027 (1986-05-01), Masaki
patent: 4628486 (1986-12-01), Sakui

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