Semiconductor ridge waveguide laser with asymmetrical cladding

Details Semiconductor ridge waveguide laser with asymmetrical cladding Semiconductor ridge waveguide laser with asymmetrical cladding

1993-02-25

1994-04-05

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

053012020

ABSTRACT:
A semiconductor ridge waveguide laser having a high value of horizontal far-field wherein the laser structure includes a substrate, a first or lower cladding layer composed of a AlGaAs on the substrate, an acting layer on the lower cladding layer, and a second or upper cladding layer composed of AlGaAs on the active layer. The upper cladding layer includes a raised ridge portion formed by etching the upper cladding layer through a mask. A contact layer is disposed on top of the ridge portion. The aluminum mole concentration of the lower cladding layer is greater than the aluminum mole concentration of the upper cladding layer. This forces the optical mode towards the upper cladding layer and results in an increased lateral waveguide confinement that produces a high horizontal far-field.

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High Power Ridge-Waveguide AlGaAs GRIN-SCH Laser Diode, Harder et al., Electronic Letters, Sep. 25 1986, vol. 22, No. 20, pp. 1081-1082.

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