Semiconductor resonant tunneling device with thick layer

Details Semiconductor resonant tunneling device with thick layer Semiconductor resonant tunneling device with thick layer

1992-06-10

1993-09-07

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257184, 257 25, 257 23, 257 21, H01L 2714

Patent

active

052431983

ABSTRACT:
A semiconductor radio-frequency power detector comprises, in a stack, an ohmic contact layer, undoped layer of a first semiconductor material, such as GaAs, of thickness l.sub.1, an undoped layer of a second semiconductor material, such as AlGaAs, of larger band gap than the first semiconductor material, the thickness of the layer being such that transport in the layer is primarily by intraband tunnelling, a second undoped layer of the first semiconductor material of thickness l.sub.2, where l.sub.2 >20l.sub.1, and a second ohmic contact layer. The difference between the thicknesses of the layers of the first semiconductor material gives rise to asymmetry in the current density/applied voltage characteristic for the device. An n+ layer may be incorporated in the second layer of the intrinsic first material to reduce "band bending" and to increase the current density.

REFERENCES:
patent: 4816878 (1989-03-01), Kano et al.
patent: 5017973 (1991-05-01), Mizuta et al.
patent: 5079601 (1992-01-01), Esaki et al.
patent: 5121181 (1992-06-01), Smith, III et al.
Ting et al., "Large Peak Current Densities in Novel Resonant Interband Tunneling Heterostructures," Appl. Phys. Lett. 57(12), Sep. 17, 1990, pp. 1257-1259.

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