Semiconductor resistor with improved width accuracy

Details Semiconductor resistor with improved width accuracy Semiconductor resistor with improved width accuracy

2006-08-08

2006-08-08

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257SE29326, C257SE27001, C257SE27047, C257SE21004, C257S363000

Reexamination Certificate

active

07087978

ABSTRACT:
The accuracy of the width measurement of a semiconductor resistor is improved by modifying the gate mask of a standard MOS transistor fabrication process to form an opening between regions of polysilicon that are used as a mask when the substrate or well material is implanted to form the resistor.

REFERENCES:
patent: 5721166 (1998-02-01), Huang et al.
patent: 6104277 (2000-08-01), Iniewski et al.
patent: 6475873 (2002-11-01), Kalnitsky et al.
patent: 2002/0017678 (2002-02-01), Gonzalez et al.
S. Wolf et al., Silicon Processing, 2000, Lattice Press, vol. 1, pp. 821, 822 and 834-837.
Peter Van Zant, Microchip Fabrication, 2000, McGraw-Hill, pp. 514 and 515.

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