Semiconductor resistor having a high value resistance for use in

Details Semiconductor resistor having a high value resistance for use in Semiconductor resistor having a high value resistance for use in

1975-03-17

1977-01-25

James, Andrew J.

Electrical resistors

Incased, embedded, or housed

Element in insulation with outer metallic sheath

357 58, 357 88, 357 91, 338320, H01L 2702, H01L 2912, H01H 3738, H01H 3740

Patent

active

040054713

ABSTRACT:
A semiconductor resistor structure for providing a high value resistance particularly adapted for space charge limited transistor applications, the resistor being fabricated in a semiconductor body having a resistivity in excess of 1 ohm cm., more preferably in semiconductor material that is nearly intrinsic. The resistor has two parallel elongated surface diffused regions in the body of an impurity similar to the background impurity of the body and having a surface concentration sufficient to provide an ohmic contact, the boundaries of said surface diffused regions defined by the interface where the impurity concentration of the diffused region is ten percent more than the impurity concentration of the background impurity of the body. In a preferred embodiment, the surface diffused regions are spaced such that the boundaries intersect with each other, and ohmic contact terminals to each of the diffused regions.

REFERENCES:
patent: 3729662 (1973-04-01), Langdon
patent: 3761786 (1973-09-01), Imaizumi et al.
patent: 3766446 (1973-10-01), Tarui et al.

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