Semiconductor resistance element used in a semiconductor integra

Details Semiconductor resistance element used in a semiconductor integra Semiconductor resistance element used in a semiconductor integra

1988-07-01

1989-03-07

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307296R, 307363, 307304, H03K 1994, H03K 1920

Patent

active

048109070

ABSTRACT:
A semiconductor resistance element used in a semiconductor integrated circuit containing a plurality of MESFET's or JFET's as an active element, for interconnecting the active elements or for connecting to the external circuit, etc. This semiconductor resistance element is constituted by interconnecting the drain and gate electrodes of the MESFET or JFET and limiting the drain current thereof within a given range.

REFERENCES:
patent: 4423339 (1983-12-01), Seelbach et al.
patent: 4631426 (1986-12-01), Nelson et al.
EDN Electrical Design News, vol. 23, No. 17, Sep. 1978, pp. 44-52; S. Davis: "GaAs metal-Semiconductor technology promises gigahertz LSI at low power".
IBM Technical Disclosure Bulletin, vol. 20, No. 7, Dec. 7, 1977, pp. 2744-2745, New York; D. L. Bergeron et al.: "Merged junction field-effect resistor".
GaAs IC Symposium, Technical Digest, Phoenix, 25-27 Oct. 1983, pp. 158-161, IEEE, NY; M. Abe et al.: "Hemt LSI technology for high speed computers".
European Search Report, The Hague, 7-2-86.

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