Semiconductor resistance element and process for fabricating sam

Details Semiconductor resistance element and process for fabricating sam Semiconductor resistance element and process for fabricating sam

1991-12-16

1993-05-11

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257347, H01L 2702, H01L 2713

Patent

active

052104389

ABSTRACT:
A semiconductor resistance element of one electrical conduction type comprises: a semiconductor region including a first impurity of opposite electrical conduction type and second impurity of one electrical conduction type, wherein said second impurity is more heavily introduced so that a predetermined resistance is obtained; and electrode regions provided on both ends of said semiconductor region.

REFERENCES:
patent: 3484662 (1969-12-01), Hagon
patent: 4239559 (1980-12-01), Ito
patent: 4489104 (1984-12-01), Lee
patent: 4809056 (1989-02-01), Shirato et al.
patent: 4933730 (1990-06-01), Shirato
IEEE Transactions on Electron Devices "High Performance Low-Temperature Poly-Si n-Channel TFT's for LCD", Akio Mimura, et al, pp. 351-359, vol. 36, No. 2, Feb. 1989.
"Polysilicon Resistor Modification with Hydrogen Plasmas on Fabricated Integrated Circuits", D. S. Ginley et al, pp. 2078-2080, Journal of the Electrochemical Society, Aug. 1987.

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