Semiconductor rectifying diode with PN geometry

Details Semiconductor rectifying diode with PN geometry Semiconductor rectifying diode with PN geometry

1992-01-09

1993-10-26

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Conductivity modulation device

257618, 363 15, H01L 2990

Patent

active

052568890

ABSTRACT:
A semiconductor rectifying diode includes a first semiconductor region of one conductivity type, a plurality of third semiconductor regions of the other conductivity type provided on one surface of said first semiconductor region to be spaced a distance W, and a main electrode provided on said one main surface to in ohmic contact with said first semiconductor region and in contact with said third semiconductor regions through the Schottky barrier. To reduce reverse leakage current a relation of 2wo<W.ltoreq.3D is satisfied, where D is the depth of said third semiconductor regions and wo is the width of a depletion layer spread to said first semiconductor region by a diffusion potential of the pn junction formed between said first semiconductor region and said third semiconductor region.

REFERENCES:
patent: 4811187 (1989-03-01), Nakajima et al.
patent: 4862229 (1989-08-01), Mundy et al.
patent: 5081509 (1992-01-01), Kozaka et al.

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