Semiconductor rectifying diode with pn geometry

Details Semiconductor rectifying diode with pn geometry Semiconductor rectifying diode with pn geometry

1990-09-11

1992-01-14

Mintel, William

357 15, 357 38, 357 55, H01L 2990

Patent

active

050815091

ABSTRACT:
A semiconductor rectifying diode includes a first semiconductor region of one conductivity type, a plurality of third semiconductor regions of the other conductivity type provided on one surface of said first semiconductor region to be spaced a distance W, and a main electrode provided on said one main surface in ohmic contact with said first semiconductor region and in contact with said third semiconductor regions through the Schottky barrier. To reduce reverse leakage current a relation of 2wo<W.ltoreq.3D is satisfied, where D is the depth of said third semiconductor regions and wo is the width of a depletion layer spread to said first semiconductor region by a diffusion potential of the pn junction formed between said first semiconductor region and said third semiconductor region.

REFERENCES:
patent: 4862229 (1989-08-01), Mundy et al.

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